SiO_2缓冲层对柔性ITO薄膜特性的影响  

Effects of SiO_2 Buffer Layer on the Characteristics of Flexible ITO Films

作　　者：喻志农[1] 相龙锋[1] 李玉琼[1] 薛唯[1] 

机构地区：[1]北京理工大学,北京100081

出　　处：《稀有金属材料与工程》2009年第3期443-446,共4页Rare Metal Materials and Engineering

基　　金：北京市自然科学基金(3063022);北京理工大学优秀青年教师资助计划(059852)

摘　　要：利用离子辅助蒸发技术在PET塑料衬底上制备柔性ITO薄膜,重点分析了柔性ITO薄膜在增加SiO2缓冲层前后的性能变化。采用X射线衍射、紫外-可见分光光度计、四探针电阻测量仪、NT100光学轮廓仪等测试手段对薄膜样品进行表征。实验结果表明:增加缓冲层后,柔性ITO薄膜的X射线衍射特征峰的强度增加;薄膜电阻率减小为1.21×10-3?·cm;可见光峰值透过率为85%左右;表面相对光滑;薄膜电阻在一定的弯曲状态保持一定的稳定性。The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition（IBAD）, and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction （XRD）, UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21× 10^-3Ω.cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

关 键 词：离子辅助蒸发技术 ITO薄膜 二氧化硅缓冲层 

分 类 号：TB383.2[一般工业技术—材料科学与工程]