平面工艺Si-PIN低能X射线探测器研制  

Development of Low Energy X-ray Si-PIN Detectors Based on Planar technology

作　　者：张万昌[1] 何高魁[1] 黄小健[1] 乌如恭桑[1] 孙亮[1] 

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《核电子学与探测技术》2009年第1期227-229,共3页Nuclear Electronics & Detection Technology

摘　　要：叙述了用平面工艺技术制备Si-PIN低能X射线探测器的工艺方法。为了减小探测器的漏电流,采用了表面钝化和保护环技术。文章给出了厚度500μm,灵敏面积分别为5 mm2、10mm2的不同探测器在室温下漏电流测量结果以及5mm2的探测器在室温及温差电致冷条件下对55Fe5.9keV X射线的能谱响应测量结果。This paper describes the processing method of low energy X-ray Si-PIN detectors manufactured by planar technology. In order to decrease the detectors＇ leakage current, the surface passivation technique was used and a guard ring around a detector＇s sensitive area was designed. The paper gives the measurement results of the leakage currents of Si-PIN detectors with 5 mm^2 and 10mm^2 sensitive area respectively. The spectra of 5 mm^2 Si-PIN detectors for ^55Fe5. 9keV X ray are also provided at room temperature and low temperature, the detectors cooled with two stage peltiers.

关 键 词：平面工艺技术 SI-PIN探测器 能量分辨率 

分 类 号：TL814[核科学技术—核技术及应用]