氮化硅膜材料的技术应用与分析  

Applications of Si_3N_4 thin films and technological discussion on them

作　　者：何景瓷[1] 

机构地区：[1]九江职业技术学院,江西九江332007

出　　处：《真空》2009年第2期42-44,共3页Vacuum

摘　　要：叙述氮化硅薄膜的制备工艺、敏感机理;描述氮化硅/硅离子敏感半导体电极的结构布置、技术参数和试制过程,在氮化硅膜上增加了一层化学敏感及选择性较好的PVC(聚乙烯)薄膜;考察了电极对离子的选择性和灵敏度的影响,并通过对离子浓度的测试,对研发过程中的一些问题进行了分析探讨;结果表明该电极对钾和氨等其它离子的选择性有所提高,响应时间缩短,敏感特性的线性范围增大;为离子选择电极的选择和开发,提供了新的途径。Describes the preparation process and sensitive mechanism of Si3N4 thin films, as well as the construction configuration and whole developing process of the sensitive Si3N4/Si-ion semieondueting electrode with its technical parameters given. It means that a chemically sensitive and highly selective PVC thin film is deposited on Si3N4 film. Investigeting the effect of electrode on the selectivity and sensitivity of ions, some problems are tound in the developing process and discussed by testing the ion concentration. The results showed that the electrode developed can improve the seleetivities of potassium, amonia and other ions with response time shortened and the linear range of sensitivity enlarged. A new approach is thus proposed to the ion-seleetable electrodes.

关 键 词：薄膜材料 氮化硅 离子敏感 电极结构 选择性 

分 类 号：TN304.2[电子电信—物理电子学] TB43[一般工业技术]