P型氧化锌薄膜的制备  

PREPARATION OF P-TYPE ZnO THIN FILMS

作　　者：晏伯武[1] 

机构地区：[1]黄石理工学院计算机学院,黄石435003

出　　处：《中国陶瓷》2009年第4期13-17,共5页China Ceramics

基　　金：863计划项目(No:2004AA32G090)

摘　　要：研究了氧化锌薄膜的制备方法,比较了各种制备方法的特点,衬底的作用和衬底的选取。分析了p型掺杂的方法和实现途径,并进行了理论上的探讨,并对ZnO薄膜在未来电子和光电子领域的应用前景进行了展望。The fabrication of ZnO films is studied in the paper, the different preparation methods are compared, together with the function and selection of the base on which the films were prepared. The method and ways of p-type doping are analyzed, together with the discussion oI their theory. It＇ s potential application in the future electronic and opto-electronic fields is forcasted.

关 键 词：氧化锌 薄膜 P型掺杂 制备 

分 类 号：TN373[电子电信—物理电子学]