高k栅介质的研究进展  

Research Progress in High k Gate Dielectric Materials

作　　者：卢振伟[1] 吴现成[1] 徐大印[1] 赵丽丽[1] 张道明[1] 王文海[1] 甄聪棉[2] 

机构地区：[1]烟台大学光电学院,烟台264005 [2]河北师范大学物理系,石家庄050016

出　　处：《材料导报（纳米与新材料专辑）》2008年第3期234-238,共5页

基　　金：国家自然基金资助(10804026)

摘　　要：随着集成电路的飞速发展,半导体器件特征尺寸按摩尔定律不断缩小。SiO_2栅介质将无法满足Metaloxide-semiconductor field-effect transistor(MOSFET)器件高集成度的需求。因此,应用于新一代MOSFET的高介电常数(k)栅介质材料成为微电子材料研究热点。介绍了不断变薄的SiO_2栅介质层带来的问题、对MOSFET栅介质材料的要求、制备高k薄膜的主要方法,总结了高k材料的研究现状及有待解决的问题。With the rapid development of greater integrated circuit, the feature size of semiconductor devices is becoming smaller and smaller as predicted by Moore＇s Law. Silicon dioxide will no longer meet the requirements of high integration of MOSFET devices. With this background, high k materials as gate dielectrics for the next generation of MOSFET＇s are intensively investigated at now. In this paper,how the properties of MOSFETs are affected as the SiO2 layer thickness decreases, the requirements for high k materials as MOSFET gate dielectrics and main sorts of the methods for preparing high k film are described. Recent progress in high k gate dielectrics and some problems to be solved by further research are summarized.

关 键 词：微电子材料 栅介质 等效SiO2 厚度 薄膜 

分 类 号：TN304[电子电信—物理电子学]