杂质对柱形量子点系统束缚能的影响  

Influence of an Impurity on the Binding Energy for an Cylindrical Quantum Dot

作　　者：郑冬梅[1] 王宗篪[1] 

机构地区：[1]三明学院物理与机电工程系,福建三明365004

出　　处：《河北师范大学学报（自然科学版）》2009年第2期193-197,共5页Journal of Hebei Normal University：Natural Science

基　　金：三明学院科学研究发展基金项目(A0801/G);三明学院物理学优势学科建设项目(YSXK0602)

摘　　要：在有效质量近似和变分原理的基础上,考虑内建电场(BEF)效应和量子点的三维约束效应,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中杂质体系的基态能量与杂质电荷的关系,讨论了杂质电子的束缚能随量子点的主要结构参数(量子点高度L和量子点半径R)以及杂质在量子点中不同位置的变化规律,并研究了考虑量子点内外电子有效质量失配对杂质电子束缚能的影响.Based on the framework of effective-mass approximation and variational approach,the ground state energy of impurity to electron as a function of impurity charge z is studied theoretically,and the binding energy of impurity to electron as functions of the different structural parameters（the height L and the radius R） and the impurity position is discussed in detail for an cylindrical wurtzite GaN/AlxGa1-xN single quantum dot,including three-dimensional confinement in QDs and the strong built-in electric field effect.Furthermore,the influence of the difference in effective electron mass in GaN and Al0.15Ga0.85N on the binding energy is investigated.

关 键 词：GAN/ALXGA1-XN 柱形量子点 杂质 束缚能 

分 类 号：O48[理学—固体物理]