24～38GHz GaAs单片低噪声放大器的研制  

The Development of 24 - 38 GHz GaAs Low-Noise Amplifier MMIC

作　　者：张秀霞[1] 王民娟[1] 

机构地区：[1]中国电子科技集团公司第13研究所,石家庄050051

出　　处：《中国电子科学研究院学报》2009年第2期148-151,共4页Journal of China Academy of Electronics and Information Technology

摘　　要：介绍了24～38GHz低噪声放大器MMIC的研制。分析了微波晶体管放大器的噪声特性,针对噪声系数和增益,利用软件进行电路仿真优化和电磁场分析,设计制作电路版图,在标准3inGaAs工艺线进行工艺制作。采用电子束制作0.20μm"T"形栅,利用选择腐蚀的方法准确控制有源器件的Idss和Vp,微波测试结果为在频带内的噪声系数小于3.8dB,小信号增益大于13dB,增益平坦度小于±0.6dB,输入和输出驻波比小于2∶1,微波性能与NORTHROP GRUMMAN公司的同类产品ALH140C的水平相当。An introduction on the development of 24 -38 GHz low noise amplifier MMIC is offered in this paper. The noise features of the microwave transistor amplifier are analyzed to obtain noise coefficient and gain, according to which LNA simulation and optimization are carried out using software. Circuit layout is then designed according to a standard 3-inch GaAs technical line. A 0.2 μm T-shaped gate is formed by using electron beam technique. Both the Idss and Vp in this design are precisely controlled by selective etching technology. Microwave test results indicate that the LNA can achieve a maximum noise level of 3.8 dB, a minimum small signal gain of 13 dB, with a gain flatness less than ±0.6 dB, and an input and output VSWR higher than 2 ： 1. The test results show a microwave property similar to ALH140C, a device of the same kind manufactured by Northrop Grumman.

关 键 词：GAAS 低噪声放大器 “T”形栅 电路仿真 单片微波集成电路 

分 类 号：TN722.3[电子电信—电路与系统]