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作 者:武玥[1] 代如成[1] 杨韶月[1] 张增明[2]
机构地区:[1]中国科学技术大学物理系,安徽合肥230026 [2]中国科学技术大学物理实验中心,安徽合肥230026
出 处:《实验技术与管理》2009年第3期37-41,共5页Experimental Technology and Management
基 金:国家自然科学基金(90406024);安徽省省级教学研究项目;中国科学技术大学校级教学研究项目
摘 要:采用溶胶凝胶法制备了Li-Mg、Na-Mg共掺杂的ZnO薄膜,利用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)分别研究了薄膜的表面形貌、结构特性和发光性质。结果表明:Mg的掺杂促进了薄膜的C轴取向生长,Na-Mg共掺ZnO薄膜的结晶性优于Li-Mg共掺样品。随着Mg掺杂的增加,晶面距变大,禁带变宽,但Na-Mg和Li-Mg共掺杂中Mg对禁带宽度的调控力度小于仅有Mg掺杂的情况。Na-Mg、Li-Mg共掺导致ZnO薄膜在460 nm处出现一深能级蓝绿发光带,在403 nm处出现从导带底向浅受主能级跃迁产生的紫色发光峰,此外在355 nm3、75 nm处出现两个对应于激子第一、二能级的复合发光紫外发射峰。Na/Mg and Li/Mg Co-doped ZnO thin films are prepared by Sol-Gel Method. Their micro-structures, morphologies, and photoluminescence properties are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results indicate that with the increase of Mg dopant, the c-axis orientation is enhanced, the crystallinity for Na-Mg co-doped ZnO thin film is better than that for Li-Mg co-doped ZnO thin film. The distance between (002) planes and the energy gap increase with the Mg concentration in co-doped ZnO thin film. The broadening of the energy gap is less than that for Mg doped ZnO thin film. The blue luminescence band (430-480 nm) from the deep energy level emission is observed. The purple peak at 403 nm is attributed from the transition between conduction band bottom and shallow acceptor level. The ultraviolet emission peaks at 355 nm and 375 nm are from the recombination luminescence for the first and the second exciton energy levels.
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