走带速率对Y_2O_3隔离层生长的影响  

Influence of Moving Speed on Epitaxial Growth of Y_2O_3 Buffer Layer

作　　者：张华[1] 金薇[1] 刘慧舟[1] 冯校亮[1] 杨坚[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《稀有金属》2009年第1期35-38,共4页Chinese Journal of Rare Metals

基　　金：国家973计划(2006CB601005);863计划(2006AA03Z205)资助项目

摘　　要：采用反应溅射的方法在具有立方织构的Ni基底上连续制备了Y2O3隔离层。用X射线θ-2θ扫描，φ扫描对薄膜的取向和织构进行表征，用扫描电子显微镜（SEM）对薄膜的表面形貌进行观察。主要研究了走带速率对隔离层外延生长及表面形貌的影响。实验表明：随着走带速率的增大，Y2O3的平面内妒扫描半高宽（FWHM）增大，（400）峰的相对强度减小，晶粒更加细小；同时，制备的三层Y2O3隔离层，其面内妒扫描半高宽取决于第一层的半高宽；最终在三层Y2O3隔离层上沉积了有良好外延取向的YBCO超导层，其FWHM为8．0°。Y2O3 buffer layers on the cube textured NiW substrates were prepared using continuous reactive magnetron sputtering technique. X-ray diffraction of θ-2θ scan, φ-scan were employed to characterize the in-plane alignment and cube texture. The surface morphology of buffer layers was evaluated in SEM. The effect of moving speed of NiW substrates on preparation of buffer layer was studied. The results showed that the epitaxial quality of the Y2O3 was reduced at higher speed. Although smooth and crack-free surface were observed on the films at various moving speed, grains of the films tended to become smaller on higher moving tape. In addition, the triple-layer Y203 buffer was obtained and the in-plane alignment was deter- mined by the crystal orientation of the bottom layer. The highly oriented YBCO film was produced on the triple-layer buffer.

关 键 词：走带速率 Y2O3 隔离层 反应溅射 表面形貌 

分 类 号：TM26[一般工业技术—材料科学与工程]