注意缺陷多动障碍儿童的错误相关负电位的检测  

Measurement of the error-related negativity in patients with attention deficit hyperactivity disorder

作　　者：吕坚[1] 黄军斌[1] 吴荣琴 李桦[1] 孙复林 徐璐[1] 钱玲萍 陈兴时[2] 

机构地区：[1]上海市闸北区精神卫生中心精神科,上海200436 [2]上海交通大学医学院附属精神卫生中心神经生理室,上海200030

出　　处：《神经病学与神经康复学杂志》2012年第3期106-108,共3页Journal of Neurology and Neurorehabilitation

基　　金：上海市闸北区卫生局课题(编号:2011YB05)

摘　　要：目的探讨注意缺陷多动障碍(ADHD)患儿的错误相关负电位(ERN)的变化特点。方法应用事件相关脑电位仪,对30例ADHD患儿和30名健康儿童做ERN检测并比较。结果与健康儿童相比,ADHD患儿的正确反应率明显降低、正确反应和错误反应的反应时明显延长;ERN潜伏期(Cz、Fz、C3和C4)明显延迟、波幅(Cz、C3、Fz和Pz)降低。结论 ADHD患儿的ERN潜伏期和波幅异常,可能反映了患者内在错误监控机制存在缺陷。Objective To measure the error-related negativity(ERN) in children with attention deficit hyperactivity disorder(ADHD).Methods The ERN were measured in 30 children with ADHD by events-related potentials instrument and the results were compared with that in 30 healthy controls.Results Compared with the healthy controls,the ADHD patients showed significantly lower rates of correct response and longer reaction periods of both correct and incorrect responses.Also,their ERN latencies(Cz,Fz,C3 and C4) were prolonger and amplitudes(Cz,C3,Fz and Pz) were decreased significantly.Conclusion The abnormalities of ERN in patients with ADHD may reflect their deficiency in error-monitoring mechanism.

关 键 词：注意缺陷多动障碍 错误相关负电位 事件相关电位 

分 类 号：R749.94[医药卫生—神经病学与精神病学]