水热合成法制备HfO_2薄膜(英文)  

HfO_2 Thin Films Prepared by Hydrothermal Synthesis

作　　者：沈军[1] 王生钊[1] 王晓栋[1] 张志华[1] 周斌[1] 吴广明[1] 

机构地区：[1]同济大学,上海200092

出　　处：《稀有金属材料与工程》2010年第S2期52-56,共5页Rare Metal Materials and Engineering

基　　金：Supported by Chinese National Foundation of High Technology (2008AA8041606);Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology (07DZ22302);Shanghai Educational Development Foundation (2007CG26);Program for Young Excellent Talents in Tongji University (2006KJ052)

摘　　要：以HfOCl2·8H2O为前驱体采用水热合成法制备了HfO2溶胶,采用旋涂法制备了HfO2-PVP薄膜。利用透射电镜和粒度分析仪观察和表征HfO2溶胶的微观结构和粒度分布。实验发现,通过调整不同的水热合成温度、反应物前驱体浓度、溶液的pH值和水热合成时间等制备条件,可以在3～100nm范围内对HfO2溶胶颗粒的大小进行控制。分别采用椭偏仪,原子力显微镜,傅里叶红外变换光谱对HfO2–PVP薄膜的形貌和结构进行了表征和测量。结果表明,旋涂法制备的HfO2-PVP薄膜的粗糙度小于0.5nm,折射率达1.75左右。实验还发现,HfO2薄膜的激光损伤阈值达到15J/cm3(1064nm,1ns),HfO2-PVP薄膜的激光损伤阈值可高达20J/cm3(1064nm,1ns)。还对HfO2-PVP薄膜中有机粘结剂PVP在激光诱导损伤过程中的作用机理进行了初步探讨。HfO2 sols were prepared by hydrothermal synthesis from HfOCl2?8H2O (precursor). HfO2 thin films were further prepared via a spin coating method. TEM and particle size analyzer were used to characterize the microstructure and particle size distribution of the HfO2 sols. It is found that the particle size in HfO2 sols can be controlled from about 3 nm to 100 nm via changing reaction parameters. The HfO2 and HfO2-PVP thin films were characterized by ellipsometer, atomic force microscope (AFM), and Fourier-transform infrared spectroscopy (FTIR) respectively. The roughness of HfO2-PVP films is less than 0.5 nm and the refractive index is about 1.75. The results show that the laser damage threshold of HfO2 films is higher than 15 J/cm3 (1064 nm, 1 ns), while the laser damage threshold for HfO2-PVP coatings can be as high as 20 J/cm3 (1064 nm, 1 ns). The mechanism of the laser damage process of HfO2-PVP coatings was also discussed.

关 键 词：HFO2薄膜 水热合成 高折射率 HfO2-PVP薄膜 

分 类 号：TB383.2[一般工业技术—材料科学与工程]