短沟道下共栅结构宽带CMOS LNA的设计  

Research and Design of Common-Gate Wideband CMOS LNA

作　　者：王小力[1,2] 袁刚[2] 

机构地区：[1]西安交通大学理学院,西安710049 [2]西安交通大学电子与信息工程学院,西安710049

出　　处：《微电子学》2009年第2期141-145,共5页Microelectronics

基　　金：教育部科学技术重点研究项目(03151)资助

摘　　要：基于短沟道MOS器件的过量因子随沟道长度降低缓慢增加的特征,研究了短沟道下共栅结构宽带低噪声放大器的噪声性能,并在0.18μm CMOS工艺下设计实现了共栅结构的宽带低噪声放大器。流片测试结果表明,在1.8 V电源电压、4.1 mA工作电流下,该系统获得6.1 dB的最小噪声系数;综合性能与长沟道下相近,符合理论分析和设计要求。Recent research showed that excess factor of short-channel MOSFETs slowly increases with the decrease of channel lengths. Based on this conclusion, noise performance of wide-band LNA with common-gate（CG）to- pology in short-channel was studied. An LNA circuit was designed and implemented in 0. 18 μm CMOS process. Test results showed that the circuit had a minimum noise figure of 6. 1 dB at 4. 1 mA current and 1.8 V supply voltage, and its general performance was close to that of LNA with long-channel MOSFETs, which is in agreement with theoretic analysis.

关 键 词：CMOS 过量因子 共栅结构 低噪声放大器 宽带低噪声放大器 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.3