SiOC低介电常数介质吸湿机理的理论研究  

Study on the Mechanism of Water Absorption of SiOC Low-κ Dielectrics

作　　者：孙亮[1] 朱莲[1] 薛原[1] 丁士进[1] 张卫[1] 

机构地区：[1]复旦大学微电子学系,上海200433

出　　处：《上海交通大学学报》2007年第S2期9-11,共3页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金资助项目(90607019)

摘　　要：利用密度泛函理论(DFT)系统研究了掺碳的SiO2低κ互连介质(SiOC)的吸湿问题.比较了Si-CH3和Si-CH2-Si这两种反应位与H2O的反应,研究发现—CH3更加容易与水反应而脱离SiOC薄膜.还研究了多个水分子吸附于Si-CH3反应位情况下的吸水反应.当SiOC薄膜表面吸附多个水分子,并且水分子以二聚物形式存在时,吸水反应的势垒明显降低.Density functional theory(DFT) was used to study water absorption reactions of carbon doped silica(SiOC)films.Water reactions on Si-CH_3 site and Si-CH_2-Si site were compared.It is found that —CH_3 is more easily attacked by water molecules and released from SiOC films.The reactions of multi water molecules attached to the Si-CH_3 site were also studied,which are likely happened in porous films or in defects.When multi water molecules are dimmer-liked,the reactivity sharply increases.

关 键 词：SIOC 密度泛函理论 吸水反应 

分 类 号：TN304[电子电信—物理电子学]