Study of the Non-desired Punch-through Effect of the PIN Diodes in the Readout Device of the PbWO_4 Crystal Detectors  

作　　者：IppolitovMikhail AlexandrovDmitri SiliriakYuri MankoVladislav BogoliovbskiMikhai1 SadovskiSergei KenstantinovSergei PetrovViacheslav ArneKlovning 

机构地区：[1]Kurehatov,Kurehatov,Kurehatov,Kurehatov,IHEP,IHEP,IHEP,IHEP,Department Moscow,Russia,Moscow,Russia,Moscow,Russia,Moscow,Russia,Protvino,Russia,Protvino,Russia,Protvino,Russia,Protvino,Russia,of Physics,University of Bergen Norway

出　　处：《Annual Report of China Institute of Atomic Energy》2001年第0期44-47,共4页中国原子能科学研究院年报（英文版）

摘　　要：The punch-through effect of the PIN diodes in the readout device of the PbWO4 crystal detectors was studied by using of Ee=5, 10, 20, 30, 40 GeV electron beam and Eμ=100 GeV μ beam on the CERN/SPS. Figure 1 is the experimental spectrum of the 100 GeV μ beam. The left peak is related with the energy signal created by light-output corresponding to 100 GeV μ lost in the PbWO4 crystal. The right peak is related with the energy signal created by light-output corresponding to 100 GeV

关 键 词：DESIRED created READOUT CERN Figure absolute proton PARITY nuclei NORMALIZATION 

分 类 号：TL81[核科学技术—核技术及应用]