PREPARATION OF AMORPHOUS Ti-Pd ALLOYS AND THEIR PHYSICAL PROPERTIES  

作　　者：ZHANG Shengliang Nanjing University,Nanjing,ChinaSUMIYAMA Kenji NAKAMURA Yoji Kyoto University,Japan 

出　　处：《Acta Metallurgica Sinica(English Letters)》1990年第12期426-430,共5页金属学报（英文版）

摘　　要：The amorphous Ti_(l_x)Pd_x alloys within a wider composition range of 0.25<x<0.6 have been prepared using sputter-deposition method on the liquid-nitrogen-cooled substrates.The for- mation of amorphous Ti-Pd alloys relates to the topologically close-packed intermetallic compounds existing in the equilibrium phase diagram.These amorphous Ti-Pd alloys are identified by differential scanning calorimetry that the crystallization begins at about 700 K. The insensitive dependence of the crystallization temperature on composition of the alloys is explained with a model proposed by Miedema and Buschow.The electric resistivity of the amorphous Ti-Pd alloys in the range of 4.2 to 270 K decreases monotonously with in- creasing temperature.The amorphous Ti_(l_x)Pd_x alloys within a wider composition range of 0.25<x<0.6 have been prepared using sputter-deposition method on the liquid-nitrogen-cooled substrates.The for- mation of amorphous Ti-Pd alloys relates to the topologically close-packed intermetallic compounds existing in the equilibrium phase diagram.These amorphous Ti-Pd alloys are identified by differential scanning calorimetry that the crystallization begins at about 700 K. The insensitive dependence of the crystallization temperature on composition of the alloys is explained with a model proposed by Miedema and Buschow.The electric resistivity of the amorphous Ti-Pd alloys in the range of 4.2 to 270 K decreases monotonously with in- creasing temperature.

关 键 词：SPUTTER-DEPOSITION amorphous Ti-Pd alloy CRYSTALLIZATION electrical resistivity 

分 类 号：TG-55[金属学及工艺]