SPUTTER-DEPOSITION

作品数：4被引量：2H指数：1
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Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE被引量：1
《Chinese Physics B》2021年第3期430-435,共6页Di-Di Li Jing-Jing Chen Xu-Jun Su Jun Huang Mu-Tong Niu Jin-Tong Xu Ke Xu 
Project supported by the National Key Technologies R&D Program of China(Grant No.2017YFB0404100);Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences.
AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy(HVPE)have been fabricated and structurally characterized.The crystalline quality and surface morpholog...
关键词：hydride vapor phase epitaxy(HVPE) ALN threading dislocation(TD) SPUTTER-DEPOSITION 
Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001)被引量：1
《Journal of University of Science and Technology Beijing》2001年第3期207-209,共3页Hong Qiu, Yue Tian, Mituru Hashimoto Applied Science School, University of Science and Technology Beijing, Beijing 100083, China Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, 30 Xueyuanlu, Haidian District, Beijing 10008 
Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during depos...
关键词：Cu film biased plasma-sputter-deposition misfit dislocations TCR XHRTEM 
Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)被引量：1
《International Journal of Minerals,Metallurgy and Materials》2000年第3期218-221,共4页Hong Qiu, Mituru Hashimoto ( Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, Beijing 100083, China Applied Science School, University of Science and Technology Beijing, Beijing 100083, China  Department of Applied Phys 
NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the ...
关键词：NiCu film plasma-sputter-deposition negative bias voltage ADHESION 
PREPARATION OF AMORPHOUS Ti-Pd ALLOYS AND THEIR PHYSICAL PROPERTIES
《Acta Metallurgica Sinica(English Letters)》1990年第12期426-430,共5页ZHANG Shengliang Nanjing University,Nanjing,ChinaSUMIYAMA Kenji NAKAMURA Yoji Kyoto University,Japan 
The amorphous Ti_(l_x)Pd_x alloys within a wider composition range of 0.25
关键词：SPUTTER-DEPOSITION amorphous Ti-Pd alloy CRYSTALLIZATION electrical resistivity 
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