Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE  

作　　者：Di-Di Li Jing-Jing Chen Xu-Jun Su Jun Huang Mu-Tong Niu Jin-Tong Xu Ke Xu 李迪迪;陈晶晶;苏旭军;黄俊;牛牧童;许金通;徐科(Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China [3]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [4]Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

出　　处：《Chinese Physics B》2021年第3期430-435,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Technologies R&D Program of China(Grant No.2017YFB0404100);Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences.

摘　　要：AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy(HVPE)have been fabricated and structurally characterized.The crystalline quality and surface morphology of as-grown AlN films with various V/III ratios were studied and compared.The XRD results showed that the crystalline quality of the AlN film could be optimized when the growth V/III ratio was 150.At the same time,the full width at half-maximum(FWHM)values of(0002)-and(10¯12)-plane were 64 arcsec and 648 arcsec,respectively.As revealed by AFM,the AlN films grown with higher V/III ratios of 150 and 300 exhibited apparent hillock-like surface structure due to the low density of screw threading dislocation(TD).The defects microstructure and strain field around the HVPE-AlN/sputtered-AlN/sapphire interfaces have been investigated by transmission electron microscopy(TEM)technique combined with geometric phase analysis(GPA).It was found that the screw TDs within AlN films intend to turn into loops or half-loops after originating from the AlN/sapphire interface,while the edge ones would bend first and then reacted with others within a region of 400 nm above the interface.Consequently,part of the edge TDs propagated to the surface vertically.The GPA analysis indicated that the voids extending from sapphire to HVPE-AlN layer were beneficial to relax the interfacial strain of the best quality AlN film grown with a V/III ratio of 150.

关 键 词：hydride vapor phase epitaxy(HVPE) ALN threading dislocation(TD) SPUTTER-DEPOSITION 

分 类 号：O469[理学—凝聚态物理]