Ta_2O_5的俄歇谱分析  

THE ANALYSIS OF Ta_2O_5 SAMPLE BY AES

作　　者：陆明[1,2] 费璐[1,2] 张强基 

机构地区：[1]复旦大学近代物理研究所 [2]中国科学院北京真空物理开放实验室

出　　处：《真空科学与技术学报》1989年第2期83-86,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：利用俄歇电子谱仪对作为深度剖面分析定标用的Ta_2O_5/Ta标样在溅射过程中的行为进行了分析。标样为阳极氧化工艺制成,厚度为500(?)。分析证明,在溅射过程中,样品内的元素组份及化学状态均相应发生明显变化,并可将全过程划分为三个阶段。本文还对利用该标样作剖面分析分辨能力的确定及标样长期贮存性能的可能变化作了讨论。The Ta_2O-5/Ta samples as a referene material for depth profile have been investigated by PHI-590 scanning Auger microprobe. The Ta_2O_5 films of 500 (?) in thickness were prepared on the tantalum substrate by the method of anodic oxidation. The results show that the constituents and their chemical states will be changed during the whole profiling process which can be divided into three stages. The determination of the depth resolution, the stability of the saraple and the shape of the depth profile in the intorface are also discussed.

关 键 词：俄歇电子谱 深度剖面 阳极氧化工艺 长期贮存 分辨能力 Ta₂O₅ 化学状态 谱分析 多层结构 组份 

分 类 号：TB7-55[一般工业技术—真空技术]