基于田口方法的GaAs基片化学机械抛光加工工艺研究  

Experimental Study on Parameter Optimization of GaAs Wafer Polishing Using Taguchi Method

作　　者：吕迅[1] 郁炜[2] 

机构地区：[1]浙江工业大学机械制造及自动化教育部重点实验室,浙江杭州310032 [2]浙江工业大学浙西分校信息与电力工程系,浙江衢州324000

出　　处：《润滑与密封》2009年第4期74-76,89,共4页Lubrication Engineering

摘　　要：为获得超平滑的GaAs基片表面,以H2O2、CeO2和NH4OH溶液为抛光液,采用化学机械抛光方法对GaAs基片进行了超精密加工。采用田口方法对氧化剂H2O2含量、碱性溶液NH4OH含量、加工载荷、抛光盘转速4个重要影响因素进行了优化设计,得到以表面粗糙度和材料去除率为评价条件的综合最优抛光参数。结果表明,当H2O2质量分数为30%,NH4OH质量分数为0.08%,加工载荷为18kPa,抛光盘转速为30r/min时,可以获得表面粗糙度和材料去除率综合最优的GaAs基片抛光效率。Chemical mechanical polishing method was used to machine GaAs wafer efficiently in order to obtain ultra-smooth GaAs wafer surface. H2O2 ,CeO2 and NH4OH were used as polishing slurry.Four key parameters,concentration of H2O2,concentration of NH4OH,polishing load and polishing plate speed which influence surface roughness and material removed rate of GaAs wafer were analyzed by Taguehi method and the optimized parameters were gained. The result shows that when the mass fraction of H2O2 is 30% ,the mass fraction of NH4OH is 0.08% ,the polishing load is 18 kPa and the polishing plate speed is 30 r/min ,the optimal polishing efficiency can be obtained.

关 键 词：砷化镓 化学机械抛光 田口方法 

分 类 号：TH117.1[机械工程—机械设计及理论]