ZnS/CdS单带差超晶格薄膜的制备及光学性质研究  

Preparation and optical performance study of ZnS/CdS single offset superlattice

作　　者：黄杨[1] 黎兵[1] 王洪浩[1] 颜璞[1] 李愿杰[1] 刘才[1] 孟奕峰[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《功能材料》2009年第4期643-644,649,共3页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2003AA513010);国家自然科学基金资助项目(60506004)

摘　　要：为了提高CdTe太阳电池的效率，ZnS／CdS单带差超晶格被创新性地提出。用射频磁控溅射法制备了ZnS／CdS单带差超晶格薄膜，用SEM观察样品截面，分层清晰；测试了ZnS／CdS单带差超晶格薄膜的透过谱图，在300～800nm波长范围内存在4个明显的透过峰。相较于CdS单层膜与ZnS单层膜，ZnS／CdS单带差超晶格薄膜在可见光短波部分的光谱响应十分明显，说明ZnS／CdS单带差超晶格薄膜的电子能带与光子吸收方式发生了明显的变化。理论上可以提高CdTe太阳电池的效率。ZnS/CdS single offset superlattice was supposed to increase efficiency of CdTe solar cell. It was prepared by magnetron sputtering technique, and the cross section was observed. There were sharp interfaces between ZnS and CdS layers. Transmittance spectrogram of ZnS/CdS single offset superlattiee was measured and compared with them of CdS and ZnS single layer. There were 4 peaks in ZnS/CdS single offset superlattice＇s transmittance spectrogram. These peaks illustrated that ZnS/CdS single offset superlattice＇s photon absorption mode were multiple, and ZnS/CdS single offset superlattice＇s energy band structure was obviously different from them of CdS and ZnS single layer.

关 键 词：ZnS/CdS单带差超晶格 磁控溅射 光透过性质 

分 类 号：O614.24[理学—无机化学]