808nm激光诱导电化学刻蚀研究  

808nm Laser-Induced Electrochemical Etching

作　　者：龙芋宏[1] 史铁林[2] 熊良才[2] 韦星 植海深 蒙永祥 

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]华中科技大学机械科学与工程学院,武汉430074 [3]广西右江矿务局,广西田东531501

出　　处：《桂林工学院学报》2009年第1期132-135,共4页Journal of Guilin University of Technology

基　　金：国家重点基础研究发展计划资助项目(2003CB716207);国家自然科学基金资助项目(50575078;50405033)

摘　　要：为探讨半导体激光电化学刻蚀的工艺特性,采用808 nm半导体激光作为光源,聚焦激光照射浸于溶液中的阳极上,实现激光诱导电化学刻蚀材料。在实验的基础上,通过对金属和半导体材料刻蚀的比较,分析了激光电化学刻蚀硅的工艺特点。实验表明,808 nm激光诱导电化学刻蚀工艺是一个光热刻蚀过程,但不适合刻蚀半导体材料。Laser electrochemical etching process combining laser etching and electrochemical etching is a new etching technique. 808 nm semiconductor laser is used as light source. The experiments of micromachining materials by laser-induced electrochemical etching are carried out. On the basis of experiment, the character of laser electrochemical etching is analyzed in detail by comparing etching metal to semiconductor. In the experiment 808 nm laser electrochemical etching laser photo-thermal effect induces electrochemical dissolution. It is unsuitable for 808 nm laser electrochemical etching to etch semiconductor.

关 键 词：激光 电化学 刻蚀 硅 不锈钢 

分 类 号：TG665[金属学及工艺—金属切削加工及机床]