脉冲阴极弧放电制备碳氮薄膜及其分析  

Investigation on CN thin film deposited by pulsed cathode arc process

作　　者：刘娜[1] 施芸城[1] 

机构地区：[1]东华大学理学院,上海201620

出　　处：《物理实验》2009年第4期16-18,22,共4页Physics Experimentation

摘　　要：采用高压点火的方式触发脉冲阴极弧放电,在Si(100)衬底上制备出较为光滑、均匀、致密的碳氮薄膜.研究发现在不同的放电电压与距离对薄膜的沉积起到了很重要的作用.扫描电镜及电子能谱分析表明,薄膜为非晶碳氮薄膜,并且随沉积能量的增大,氮的含量有所增大.放电溅射过程分析与实验结果相吻合.Smooth, dense and uniform CN thin film is deposited on a Si（100） substrate by pulsed cathode arc, which is triggered by high voltage ignition. The discharge voltage and film-substrate distance play an important role in the course of deposition. Scanning electron microscopy and electron spectroscopy analysis show that the film is non-crystal. The content of nitrogen increases with the increase of deposition energy, The course of deposition is analyzed in theory, and the theoretic results agree with the experimental conclusion.

关 键 词：高压点火 脉冲阴极弧 碳氮薄膜 

分 类 号：O484[理学—固体物理]