C_(60)作为石英衬底过渡层汽相生长金刚石薄膜  

Growth of diamond film by CVDusing C60 as intermediatc layer of SiO2 substrate

作　　者：杨国伟[1] 张兵临[2] 

机构地区：[1]湘潭大学 [2]郑州大学

出　　处：《半导体光电》1998年第3期205-207,共3页Semiconductor Optoelectronics

基　　金：湖南省自然科学基金

摘　　要：采用微波等离子体化学气相沉积方法（ＭＷＰＣＶＤ），以Ｃ６０膜作为过渡层，在石英（ＳｉＯ２）衬底表面，首次在等离子体预处理中，无衬底负偏压条件下，生长出金刚石晶粒。通过扫描电镜（ＳＥＭ）观察到金刚石晶粒呈菜花状，生长表面为（１００）晶面。Diamond grains are successfully grown for the first time on SiO2 surface using C60 as the intermediate layers by microwave plasma CVD (MWPCVD) without relatively high substrate's negative bias at the process of pretreatment prior to MWPCVD.SEM observation shows that the diamond grains are cauliflower-like exhibited with the grown surface of (110).

关 键 词：石英 金刚石薄膜 碳60 MWPCVD 薄膜 

分 类 号：O613.71[理学—无机化学] O484.1[理学—化学]