ICP-PECVD法制备类金刚石膜  

Study of Diamond-Like Carbon Films by ICP-PECVD

作　　者：孙丽[1] 白杰[1] 朱立强[1,2] 刘东平[2] 

机构地区：[1]大连交通大学机械工程学院,辽宁大连116028 [2]大连民族学院光电子技术研究所,辽宁大连116600

出　　处：《大连交通大学学报》2009年第2期14-17,共4页Journal of Dalian Jiaotong University

摘　　要：以CH4为放电气体,利用电感耦合等离子体化学气相沉积(ICP-PECVD)法制备了类金刚石薄膜,使用FTIR、AFM、台阶仪对薄膜进行了表征,并对薄膜的沉积过程进行了光谱诊断(OES).研究了射频功率和基底在放电腔体中的位置对薄膜表面粗糙度、沉积速率和硬度的影响.实验结果表明:A位置处薄膜粗糙度随着功率的增加先减小后增大,随着射频功率的升高,薄膜的硬度逐渐增大,沉积速率先增大后减小,而薄膜硬度和沉积速率都随着与线圈中心距离的增加而减小.光谱诊断结果显示,随着功率的升高,Iβ/Iα和CH的强度呈增大趋势.结合上述研究结果,分析了影响薄膜生长的多种因素.Diamond-like carbon films are prepared using methane （CH4） inductive coupled plasma enhanced chemical vapor deposition （ICP-PECVD）. The films are analyzed using fourier transform infrared spectroscopy （FTIR）, atomic force microcopy （AFM） and Miriam steps. ICP-PECVD plasmas during film deposition are characterized in-situ by means of optical emission spectrometry （OES）. The influences of discharge power and substrate distance from the coil region on film properties such as surface roughness, deposition rates, and hardness are studied. Increasing discharge power leads to an initial decrease in film roughness, then a rapid increase. Film hardness obviously increases, and deposition rates rise and then drops with increasing discharge power. Increasing the substrate distance from the coil region leads to a rapid decrease in the film hardness and deposition rate. The ration of Iβ/Iα and CH emission intensities increase with the applied power. The influences of discharge parameters on film properties are also analyzed.

关 键 词：ICP-PECVD 类金刚石膜 粗糙度 沉积速率 光谱诊断 

分 类 号：O484.1[理学—固体物理]