纳米硅薄膜复合阳极的绿色微腔式OLED的研究  

Study on P-nc-Si:H Film as Complex Anode of Green Color Microcavity OLED

作　　者：李阳[1,2] 刘星元[3] 吴春亚[2] 孟志国[2] 王忆[1] 熊绍珍[2] 

机构地区：[1]五邑大学数学物理系,广东江门529020 [2]南开大学光电子所天津市光电子薄膜器件与技术重点实验室,天津300071 [3]中国科学院长春光学精密机械与物理研究所,长春130033

出　　处：《光子学报》2009年第4期813-817,共5页Acta Photonica Sinica

基　　金：国家高技术研究发展计划"863"平板显示专项(2004AA303570);国家自然科学基金重点基金(60437030)资助

摘　　要：采用甚高频增强型等离子体化学气相沉积技术,通过优化薄膜的沉积条件制备出高性能的P-nc-Si∶H薄膜材料(σ=5.86S/cm、Eopt>2.0eV).通过XRD测量计算出薄膜<111>、<220>和<311>三个晶向上的晶粒大小分别为15nm、17nm和21nm;通过Raman测量,计算出其晶化率为35%左右.实验中,将P型纳米硅薄膜与氧化铟锡一起构成有机电致发光器件的复合阳极,研究了他们的发光特性,结果表明:由于P-nc-Si∶H薄膜材料具有近似半反半透的光学特性,它与高反射率的阴极Al使有机电致发光器件产生了微腔效应,使其发光光谱窄化,半宽高由126nm窄化到33nm;发光光亮明显增强,最大亮度为47130cd/m2,最大发光效率为9.54383cd/A,与以ITO为阴极的无腔器件相比,提高了约127%.The good performance of P-nc-Si： H thin film material withσ= 5. 86 S/era, Eopt〉2. 0 eV was prepared by optimization of the deposition condition with Very High Frequency-Plasma Enhanced Chemical Vapor Deposition （VHF PECVD） technology in our Lab. By X-ray diffraction measurement, the grains with 15 nm,17 nm and 21 nm respectively on the crystalline orientation （111〉, （220） and （311） were obtained,and by Raman spectra analysis,its crystalline fraction volume is about 35%. In this experiment, the P^＋-nc-Si film and Indium-Tin Oxide （ITO） would be together used as complex anode of Organic Electroluminesence Device （（）LED） and their luminescence characteristics was studied subsequently. The results show that this semi-transparent P^＋-nc-Si anode combined with the high reflectivity Al cathode could form a micro-cavity to improve the efficiency of drawing the light of OLED made on it. The El, spectra of the OLED were sharper and narrower and a full width at half maximum （FWHM） was sharpened from 126 nm to 33 nm. The maximum luminance efficiency of the device with the complex anode is 9. 543 83 cd/A,higher than that of the OLED with the ITO anode by 127%.

关 键 词：P型掺杂纳米硅薄膜 聚合物有机电致发光器件 微腔 

分 类 号：TN321.93[电子电信—物理电子学]