低温共烧多层AlN陶瓷基片  

LOW TEMPERRTURE COFIRED AIN MULTILAYER SUBSTRATES

作　　者：吴音[1] 缪卫国[1] 刘耀诚[1] 周和平[1] 

机构地区：[1]清华大学新型陶瓷与精细工艺国家重点实验室

出　　处：《材料研究学报》1998年第2期139-143,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金!6939120-2

摘　　要：介绍了由高热导率AlN陶瓷与金属W制备的低温共烧多层AlN基片研究了以Dy2O3为主的添加系统对低温烧结AlN性能、显微结构的影响以及制备低温共烧基片的关键工艺，如排胶、烧成等，结果表明：以Dy2O3为主的添加系统可有效地降低烧结温度和去除AlN晶格氧在1650℃的氮中无压烧结4h，热导率达130W（m·K）-1;两步排胶法可以较好地解决W氧化及AlN晶粒表面吸附残余碳的问题；烧结时在1400～1650℃慢速升温。A kind of low temperature cofired AIN multilayer substrates was introduced which consist of high thermal conductivity of AIN ceramics and metal W. The influence of doping system with Dy2O3 on the low temperature AIN characteristics and microstructure was studied. Some key factors such as burn Out, sintering in the process of fabricating multilayer substrates were also discussed. Results showed that additive system is effective to lower sintering temperature and remove oxygen from AIN lattice. AIN substrate with thermal conductivity 130W(m.K)-1 was obtained by pressureless sintering at 1650 ℃ for 4 h. Two-step burn out process may solve the contradiction betWeen W oxidation and residual carbon. The warp and residual stress in sintering process of cofired AIN multilayer substrates were reduced by a slow heating process from 1400 - 1650℃.

关 键 词：低温共烧 多层迭片 热导率 显微结构 氮化铝陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]