几种掺杂浓度的GaAs表面Si-δ掺杂结构研究  

Doping Concentration Effect of Si Surface Delta Doping on GaAs(001) Surface

作　　者：刘兴权[1] 陆卫[1] 陈效双[1] 乔怡敏[1] 史国良[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理所

出　　处：《Journal of Semiconductors》1998年第3期177-180,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文利用了光调制光谱（ＰＲ），原位测量了ＧａＡｓ（００１）表面Ｓｉ－δ掺杂结构样品，研究了不同掺杂浓度对Ｓｉ－δ掺杂相关的光谱结构的影响，观察到了Ｓｉ－δ掺杂结构中，价带连续态到导带半Ｖ－形势阱中子带的跃迁，观察到该跃迁相随掺杂浓度增加先向高能移动，而后达到饱和．用简单的三角势模型，在理论上计算了面掺杂浓度２．４×１０１４ｃｍ－２时，半Ｖ－形势阱中子带的能级位置，波函数的分布及光吸收系数，与实验结果相一致．Abstract Combining photoreflectance(PR) system with MBE, we study the surface Si δ doping effects on GaAs(001) surface. Compared with the conventional Si δ doping sample, these surface δ doping samples can get rid of Franz Keldysh oscillations (FKOs). We have observed that the transition energy of Si δ doping related spectral structure shifts first to higher energy and then keeps constant with increasing the doping concentration, and the GaAs fundamental transitions shift to lower energy in comparison with pure GaAs. We use a simple model to calculate the transition energy and the wavefunction. The results are in good agreement with experimental results.

关 键 词：砷化镓 掺杂 PR 结构 

分 类 号：TN304.23[电子电信—物理电子学]