片状纳米硅的结构及发光性能表征  

Structure and Photoluminescence Properties Characterization of Sheet-Shape Nanometer Silicon

作　　者：杨娟玉[1] 卢世刚[1] 肖清华[2] 张向军[1] 

机构地区：[1]北京有色金属研究总院能源材料与技术研究所,北京100088 [2]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2009年第2期217-222,共6页Chinese Journal of Rare Metals

基　　金：国家高技术研究发展计划重大资助项目(2008AA11A103)

摘　　要：采用精密磨削加工工艺法制备了厚度为纳米级片状硅，以FESEM，HRTEM，EDS，SEAD及XRD等分析手段对片状纳米硅的形貌、结构及组分进行分析和表征。结果表明，所制得的片状纳米硅为纳米级片状结构，片平均厚度为10～15nm，具有立方金刚石结构。由于量子限制效应的影响，所制得的片状纳米硅的拉曼光谱发生了红移。室温下在404，495及750nm处可观察到片状纳米硅的紫、绿、红3种光致发光谱，解释了片状纳米硅的发光机制。The sheet-shape nanometer silicon was obtained by fine grinding machining process. The morphology, structure, and chemical composition of the sheet- shape nanometer silicon were characterized by field-emission scanning electron microscopy （FESEM）, highresolution transmission electron microscopy （HRTEM） coupled with electron energy dispersive spectroscopy （ EDS ）, selected area electron-diffraction （ SEAD ）, and X-ray diffraction （XRD）. The results revealed that the sheet-shape nanometer silicon powder had dia-mond cubic structure and the average thickness distributed from 10 nm to 15 nm. Being influenced by the quantum effect, Raman spectrum of the sheetshape nanometer silicon powder was found to be red shifted. Moreover, violet-light, green-light and redlight could be observed at 404, 495, and 750 nm respectively by photoluminescence investigation at room temperature and the photoluminescent mechanism was analyzed.

关 键 词：纳米硅 精密磨削加工 光致发光 表征 

分 类 号：TN304.05[电子电信—物理电子学]