三极管2SC3312方波电磁脉冲效应实验研究  

Experimental Studies on Square Wave Electromagnetic Pulse Effect for Semiconductor Triode 2SC3312

作　　者：杨建光[1] 武占成[2] 

机构地区：[1]张家口职业技术学院基础部,河北张家口075051 [2]军械工程学院静电与电磁防护研究所,河北石家庄050003

出　　处：《河北北方学院学报（自然科学版）》2009年第2期15-19,24,共6页Journal of Hebei North University:Natural Science Edition

基　　金：国家自然科学基金资助项目(50237040)

摘　　要：目的研究硅微波低噪声三极管2SC3312对方波电磁脉冲的敏感部位和灵敏参数.方法利用方波电磁脉冲发生器对三极管进行方波电磁脉冲注入,观察三极管电参数的变化.结果沿CB注入方波脉冲时最小损伤电压为30V-50V,最小损伤能量为2.80J-3.10J;沿EB注入方波脉冲时最小损伤电压为85V-125V,最小损伤能量为22.60J-23.50J.三极管损伤前最先发生变化的电参数是CE反向击穿电压.结论三极管2SC3312对方波电磁脉冲最敏感的部位是集电结(CB),最灵敏参数是CE反向击穿电压VBRCEO.Objective To study the sensitive part and the sensibility parameter on square wave electromagnetic pulse for silicon micro wave low-noise triod 2SC3312. Methods By injecting the square wave electromagnetic pulse into triod with High Frequency Noise Simulator we can observe the change of electricity parameter. Results It is discovered that the injection of the square wave electromagnetic pulse along CB results in the loss of voltage （30V-50V） and energy （2.80J-3.10J） ; the injection along EB results in the loss of voltage （85V-125V） and energy （22.60J-23.50J）. The earliest change of electricity parameter taking place before the damage of triod is the reverse breakdown voltage VBRCEO between collector and emitter. Conclusion The experiment shows that the triode＇s most sensitive position of square wave electromagnetic pulse is the collector junction. The most sensitive parameter is the reverse breakdown voltage VBRCEO between collector and emitter.

关 键 词：三极管 方波电磁脉冲 敏感部位 灵敏参数 

分 类 号：O472[理学—半导体物理]