AgGa_(1-x)In_xSe_2晶体的生长习性研究  

Study on the Growth Habits of AgGa_(1-x)In_xSe_2 Crystals

作　　者：赵国栋[1] 朱世富[1] 赵北君[1] 万书权[1] 陈宝军[1] 何知宇[1] 王莹[1] 龙勇[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2009年第2期301-304,共4页Journal of Synthetic Crystals

基　　金：教育部博士点基金项目(No.20040610024)

摘　　要：采用DTA对不同铟含量(x)的AgGa1-xInxSe2多晶熔化和结晶温度进行了测试。结果表明:随着x值的增加其过冷度增大。采用改进的垂直布里奇曼法和实时补温技术,对AgGa1-xInxSe2晶体生长过程中的结晶特性和生长温度场关系进行了研究,并对其结晶形态进行了观测。发现:随着晶体生长过程的进行,熔体结晶温度呈下降趋势,固-液界面发生移动;生长晶体表面存在外形规则、形状相同的半球状小孔,有取向一致的台阶反光面,小孔底部为{112}面。研究结果为大尺寸、高质量的AgGa1-xInxSe2单晶体生长奠定了基础,生长出了尺寸达20mm×60mm的完整AgGa1-xInxSe2单晶体。Temperatures of the melting and crystallization for AgGa1-xInxSe2 with different x values were determined by using DTA. The result shows that the super cooling degrees increased as the x values increasing. And the relations between crystallization habit and temperature field of the furnace for the crystal growth were studied. It is found that solid-liquid interface of the crystal growth was removing gradually during the crystal growth process, many small hemispherical holes with regular shape appeared on the surface of as-grown crystals and there are step-like reflect planes in the bottom of holes. The step-like planes were the faces of {112} by X-ray diffraction analysis. Above mentioned results built a basis for the crystal growth of AgGa1-xInxSe2 with large size and high quality. High quality AgGa1-xInxSe2 single crystals with 20 mm in diameter and 60 mm in length were grown by an improved Bridgman method and real-time compensation temperature technique.

关 键 词：AgGa1-xInxSe2 晶体生长 布里奇曼法 生长习性 实时补温技术 

分 类 号：O78[理学—晶体学]