短沟道SOI中的阈值电压下降问题的研究  

Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET

作　　者：吴一尘[1] 黄河[1] 

机构地区：[1]华南师范大学计算机学院,广州510631

出　　处：《现代计算机》2009年第4期9-12,共4页Modern Computer

基　　金：国家自然科学基金(No.60076013)

摘　　要：运用电荷分享模型推导出背界面处于耗尽状态的单栅和双栅薄膜SOI MOSFET中短沟道效应引起的阈值电压下降的理论模型。利用MatLab进行了数值模拟计算,并比较了单栅和双栅器件的结果。同时分析了沟道区掺杂浓度、硅膜厚度、栅氧化层厚度对阈值电压下降的影响。结果表明,薄膜器件有利于减小短沟道效应,而双栅器件短沟道效应比单栅器件减小4倍。另外,对于薄膜器件来说,改变器件结构要比改变器件参数对短沟道效应的抑制作用好得多。Based on the charge-sharing model, analyses the influence of short-channel effect on threshold voltage for single-gate and double-gate SOI MOSFET＇s devices.Therotical calculation has been made by MatLab for both devices, indicating short channel effect will decrease threshold voltage. The channel doping, silicon film thickness and gate-oxide thick- ness are also considered in the model analysis. The results show that thin film device can efficiently suppress the short-channel effect. The double-gate device contribute only as 1/4 times of short channel effects as of the single-gate device. In addition, aheering device structure can more effectively control the short-channel effect, compared with only modify- ing device parameters.

关 键 词：单栅SOI MOSFET 双栅SOI MOSFET 短沟道效应 阈值电压下降 

分 类 号：TN386[电子电信—物理电子学] TN386.1