β-FeSi_2薄膜制备与发光研究的进展  

Progress in preparation and luminescence of β-FeSi_2 thin films

作　　者：朱放[1] 肖志松[1] 周博[1] 燕路[1] 张峰[1] 黄安平[1] 

机构地区：[1]北京航空航天大学物理系,北京100191

出　　处：《中国光学与应用光学》2009年第2期119-125,共7页Chinese Optics and Applied Optics Abstracts

基　　金：国家自然科学基金资助项目(No.10604003);北京市科技新星计划资助项目(No.2006B15);教育部新世纪优秀人才支持计划资助项目(No.NCET-07-0045);航空科学基金资助项目(No.2008ZC51037)

摘　　要：过渡金属硅化物β-FeSi2因其原料价格低廉且利于环保而成为理想的硅基发光材料之一。探讨了β-FeSi2的发光机理,介绍了几种β-FeSi2薄膜制备方法并比较了不同制备方法的特点,总结了最近几年来β-FeSi2的研究进展和主要研究结果。结合作者已经取得的结果和积累的经验,提出了提高材料发光性能方法,认为良好的结晶质量和尽可能减少缺陷是β-FeSi2高效发光的基础,因此有必要探索新的制备方法并改善已有的制备工艺。另外,尝试在β-FeSi2薄膜中应用其它元素,也有可能增大发光效率;而有效激发β-FeSi2的p-i-n结构也是提高发光效率的方法之一。最后,讨论了β-FeSi2的发展趋势,展望了该种材料的发展前景。Iron disilicide（β-FeSi2 ） is a promising material due to its advantages of abundant raw materials and environmentally-friend. This paper introduces the luminescent mechanism of β-FeSi2, and discusses several kinds of preparing methods for β-FeSi2 thin films. Then, the development and research achievements of β-FeSi2 thin films are described in detail. On the basis of achievements above and experiences by authors, it emphasizes that the good crystallized quality and the fewest possible crystal defect are the fundament for high effective luminescence, so that it is necessary for β-FeSi2 thin films to explore new preparing methods and to improve traditional growth technologies. Furthermore, doping new elements appropriately into the β-FeSi2 thin films and exciting p-i-n structures effectively for β-FeSi2 thin films will be the research focuses further. Finally, this paper reviews the general developing trends and prospects for β-FeSi2 thin films.

关 键 词：Β-FESI2 薄膜 薄膜制备 硅基发光材料 光电集成 

分 类 号：TN304.055[电子电信—物理电子学] O482.31[理学—固体物理]