二代像增强器 MCP 的 XPS 分析  

A Surface Analysis of Microchannel Plate in Gen Ⅱ Image Intensifier Tubes by XPS

作　　者：车晶[1] 杨伟毅[1] 李晓峰[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院

出　　处：《南京理工大学学报》1998年第2期149-152,共4页Journal of Nanjing University of Science and Technology

基　　金：国防科技预研行业基金

摘　　要：为降低微通道板（ＭＣＰ）的噪声，提高二代像增强器的产品成品率，该文利用Ｘ光电子能谱（ＸＰＳ）对二代倒像管和近贴管的ＭＣＰ电极表面进行组份分析。实验发现用氩离子（Ａｒ＋）溅射３ｍｉｎ后，在近贴管的ＭＣＰ电极表面检测不到碱金属元素钾（Ｋ）、钠（Ｎａ），而在倒像管ＭＣＰ电极表面Ｋ的含量为２．１６％，Ｎａ的含量为５．６４％，且在ＭＣＰ电极表面发现铅（Ｐｂ）原子谱峰。实验分析认为，ＭＣＰ电极表面吸附的碱金属Ｋ，Ｎａ与从ＭＣＰ体内偏析于表面的Ｐｂ是二代像增强器背景噪声的主要来源之一。In order to improve the noise properties and the productivity of Gen Ⅱ image intensifier tubes, an XPS analysis on the electrode surface of microchannel plate (MCP) in Gen Ⅱ inverter and wafer is studied. After 3min splash of Ar +, there is nearly no sodium (Na) and potassium (K) on the MCP surface of wafer, but on that of inverter, the concentration of Na is 5.64%, K is 2.16%, and on both MCP surfaces the spectrum of lead (Pb) is found. The researched results show the sorption of alkali metal vapors and the segregation of Pb from MCP interior to the electrode surface are one of important background noise sources of Gen Ⅱ image intensifier tubes.

关 键 词：像增强器 微通道板 能谱分析 X光电子能谱 

分 类 号：TN144[电子电信—物理电子学]