硼掺杂对直流热阴极CVD金刚石薄膜生长特性的影响  

Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode DC Chemical Vapor Deposition

作　　者：吕江维[1] 冯玉杰[1] 彭鸿雁[2] 陈玉强[2] 

机构地区：[1]哈尔滨工业大学城市水资源与水环境国家重点实验室,哈尔滨150090 [2]牡丹江师范学院物理系,牡丹江157012

出　　处：《无机材料学报》2009年第3期607-611,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(50638020);黑龙江省杰出青年基金(JC-02-04);城市水资源与水环境国家重点实验室开放研究基金(QA200805)

摘　　要：采用直流热阴极CVD法以B(OCH3)3为掺杂剂制备了硼掺杂金刚石薄膜,利用等离子体发射光谱、SEM、Ram an和XRD研究了硼掺杂对金刚石薄膜生长特性的影响,通过与未掺杂金刚石薄膜的对比发现:在直流热阴极CVD系统中,低浓度硼掺杂条件下能够长时间维持稳定的辉光放电.掺硼后辉光等离子体活性基团(Hα、Hβ、C2、CH)的种类没有改变,但C2基团的浓度升高,而CH基团的浓度下降,薄膜的生长速率提高到0.65mg.cm-2.h-1.硼掺杂金刚石薄膜为多晶薄膜,晶体生长良好,取向以(111)晶面为主,质量较未掺杂薄膜有所提高.硼原子以取代或填隙的方式掺杂进入金刚石晶格,没有破坏金刚石晶体结构.Boron-doped diamond films were prepared by hot cathode DC chemical vapor deposition system with B （ OCH3 ） 3 as dopant. The influence of boron doping on growth characteristic of diamond films was investigated by plasma optical emission spectroscope, scanning electron microscope （SEM） , Raman spectroscope, and X-ray diffraction （XRD）. Comparing with the growth process for undoped diamond films, it is found that stable glow discharge can sustain for a long time at low boron doping concentration in hot cathode DC chemical vapor deposition system. The species of glow plasma radicals （Hα,Hβ ,C2 ,CH） do not change after boron doping, while the concentration of C2 radical increases and the concentration of CH radical decreases. The growth rate of boron-doped diamond film increases to 0.65mg · cm^-2 · h^-1. The boron-doped diamond films possess well-faceted polycrystalline diamond with （ 111 ） dominant orientation, and the quality of boron-doped diamond films is improved in comparison with that of undoped diamond films. Boron atoms in the films are located at the substitutional site or interstitial site in diamond lattice, which do not destroy the diamond crystalline structure.

关 键 词：金刚石 直流热阴极 化学气相沉积 硼掺杂 

分 类 号：TB43[一般工业技术] TQ164[化学工程—高温制品工业]