大面积平面工艺Si带电粒子探测器研制  

Development of Large Area Si Detectors Based on Planar Technology for Charged Particles

作　　者：张万昌[1] 孙亮[1] 黄小健[1] 刘洋[1] 陈国柱[1] 

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《核电子学与探测技术》2009年第2期466-469,共4页Nuclear Electronics & Detection Technology

摘　　要：叙述了用平面工艺技术制备大面积Si带电粒子探测器的工艺方法。为了减小探测器的漏电流,采用了表面钝化技术。文章分别给出了厚度300μm、灵敏区直径20mm以及厚度500μm、灵敏区直径40mm探测器在室温下漏电流测量结果,以及探测器在室温条件下对241Am 5.486MeVα粒子的能谱响应测量结果。This paper describes the processing method of large area Si detectors fabricated by planar technology for charged particles. In order to decrease the detectors leakage current, the surface passivation technique was used. The paper gives the measurement results of the leakage current of 300μm thick, 20ram diameter detectors and 500tan thick, 40ram diameter detectors respectively. The spectra of the detectors for 241 Am 5. 486MeV α particles are also provided at room temperature.

关 键 词：平面工艺技术 大面积Si带电粒子探测器 能量分辨率 

分 类 号：TL814[核科学技术—核技术及应用]