粉末涂敷法制备CuInSe_2薄膜的硒化烧结过程研究  

Sintering process in preparation of CuInSe_2 thin films by powder coating

作　　者：聂洪波[1] 王延来[1] 王义民[1] 果世驹[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《粉末冶金技术》2009年第2期132-137,共6页Powder Metallurgy Technology

摘　　要：用粉末涂敷法在Mo箔上涂敷CuInSe2前驱体薄膜,进而在H2气氛中热处理制备了太阳能薄膜电池吸收层用CuInSe2薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)和其配备的能谱仪(EDS)对CuInSe2薄膜进行分析和表征,对硒化烧结过程中化学反应的可能性进行了热力学计算。结果表明:硒化烧结过程分为三个阶段:二元化合物CuSe和三元化合物CuInSe2的形成均出现在硒化烧结的前两个阶段;第三个阶段主要是CuInSe晶粒长大和薄膜的致密化过程。H气氛在CuInSe薄膜烧结过程中可能起到催化剂的作用。CuInSe2 precursor layers were coated by powder coating and followed by annealing in a H2 atmosphere and CuInSe2 thin films for solar cell were successfully prepared. Precursor layers and selenized films were characterized by X-ray diffractometry （ XRD）, scanning electron microscopy （SEM） and energy dispersive spectroscopy （ EDS）, and thermodynamics of chemical reactions in sintering process also have been calculated. The results indicate that the sintering process consists of three stages. The binary compound CuSe and ternary compound CuInSe2 forms in the first and second stages respectively. The growth of CuInSe2 grains occurs during the third stage. H2 as protective atmosphere maybe acts as catalyzer.

关 键 词：CUINSE2 Cu—In合金 烧结 热力学 

分 类 号：O642.1[理学—物理化学] TN304.055[理学—化学]