National Natural Science Foundation of China(61376056,51402341);Science and Technology Commission of Shanghai(13JC1405700,14520722000);Key Research Program of Chinese Academy of Sciences(KGZD-EW-T06)
financially supported by the Natural Science Foundation of Jiangsu (No. BK2011033)
The interface energies and electronic structures of(112) grain boundaries of Cu In Se2 thin films were investigated by first-principle calculations.It is found that the grain boundary with a Cu vacancy has low interfa...
The Schottky diode (Al/p-CuInSe2/FTO) was fabricated by simple deposition of pure Aluminum on the front side of the CuInSe2 thin film. We have investigated its electrical characteristics by measuring the current-volta...
Chalcopyrite-type CuInSe2 nanoparticles are successfully prepared by using In2Se3 nanoparticles as a precursor reacted with copper chloride(CuCl) solution via a phase transformation process in low temperature. The rea...