铜铟镓硒柔性薄膜太阳电池的制备及性能表征  

Preparation and property of CuIn_(1-x)Ga_xSe_2thin film solar cells on flexible substrates

作　　者：方小红[1] 赵彦民[1] 杨立[1] 冯金晖[1] 李巍[1] 

机构地区：[1]中国电子科技集团公司第十八研究所化学与物理电源技术重点实验室,天津300381

出　　处：《电源技术》2009年第5期406-408,共3页Chinese Journal of Power Sources

基　　金：天津市科技支撑计划重点项目(07ZCKFGX02700)

摘　　要：以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。CuIn1-xGaxSe2 thin film solar cells were preparatived on 27-70 μm thick Ti foils flexible substrates. A 0.8-1.2 μm molybdenum（Mo） layer was deposited by DC magnetron sputtering, which served as the back contact. The CIGS absorbing layers were grown by the two-step method. Cu-In-Ga metallic precursors were deposited using Cu-Ga and Cu-In alloy targets by DC magnetron sputtering. The metallic precursor films were selenized in vacuum evaporation system. Intrinsic-ZnO and Al-doped ZnO were deposited by ratio-frequency （RF） sputtering on CBD CdS devices, and the AI top contact was deposited by DC magnetron sputtering. The efficiency of CIGS-based solar cells with the structure of Ti/Mo/CIG S/CdS/ZnO/ZAO/Al is about 7.3% （test condition： AM0, 25 ℃）.

关 键 词：铜铟镓硒 薄膜 太阳电池 柔性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]