GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响  

Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

作　　者：汤乃云[1] 

机构地区：[1]上海电力学院,上海200090

出　　处：《物理学报》2009年第5期3397-3401,共5页Acta Physica Sinica

基　　金：上海市教委科研创新项目(批准号:08LZ142);上海高校选拔培养优秀青年教师科研专项基金(批准号:B01601);上海市重点学科建设项目(批准号:P1303)资助的课题~~

摘　　要：通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流.The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostrueture, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.

关 键 词：GAMNN 铁磁 共振隧穿 二极管 自旋电流输运 极化效应 极化电荷 

分 类 号：O482.534[理学—固体物理]