固态脉冲功率放大器脉冲波形顶降的研究  

Research of Pulse Waveform Drop of Solid-State Pulse Power Amplifier

作　　者：赵夕彬[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第4期381-384,392,共5页Semiconductor Technology

摘　　要：针对固态脉冲功率放大器存在脉冲波形顶降问题,从功率放大器的基本原理构成出发,对引起脉冲顶降的三个主要方面进行了分析讨论:GaAs晶体管脉冲调制开关电路、Si微波脉冲功率晶体管自身顶降以及功率晶体管的匹配电路,通过理论推导指出了脉冲顶降产生的原因,结合设计制作固态功率放大器时常出现的脉冲顶降问题,提出了解决办法及改善途径,并通过实验进行了验证,使脉冲顶降得到了改善。Aiming at the problem of pulse waveform drop existed in solid-state pulse power amplifier, three main reasons were analyzed, pulse modulated switch circuit of GaAs transistor, the inherent drop of Si microwave pulse transistor and the matching circuit of power transistor. According to the theoretic deduction and the problems of pulse waveform drop encountered during solid state power amplifier design, the method for improving was validated, and the performance was enhanced using the method.

关 键 词：脉冲功率放大器 微波脉冲晶体管 调制电路 脉冲波形顶降 

分 类 号：TN722.75[电子电信—电路与系统]