TEM样品制备辅助研究介质层可靠性失效机理  

TEM Sample Preparation Assisted Investigation on Dielectrics Reliability Failure Mechanism

作　　者：李明 段淑卿 郭强 简维廷 

机构地区：[1]中芯国际集成电路制造上海有限公司,上海201203

出　　处：《半导体技术》2009年第5期498-501,共4页Semiconductor Technology

摘　　要：研究了TEM样品制备条件对Cu/低k制程ILDTDDB失效样品及含更低介电常数(k=2.7)介质层样品的TEM成像质量的影响,发现在一定的样品制备条件下低介电常数介质的疏松特性可在TEM成像时得到增强显示,进而揭示了某Cu/低k制程ILDTDDB可靠性失效样品的失效机理为芯片制造过程中介质层沉积温度异常导致其疏松特性增强,介电常数降低,从而导致其电绝缘性能下降而引起TDDB可靠性测试项目失效。The effects of TEM sample preparation conditions on the TEM sample imaging quality of Cu / low-k manufacturing process and ILD TDDB failure samples even with lower dielectric constant （k = 2.7） dielectric layer were studied. It is found that the porous property of low-k material can be enhanced under certain sample-preparation conditions. The results reveal that the ILD TDDB failures could be related to the poor dielectrics. Namely, the dielectric layer could become loose due to abnormal temperature variations during film deposition, and a smaller k value of the dielectrics can lead to TDDB failures.

关 键 词：透射电子显微镜 样品制备 低介电常数材料 介质层TDDB可靠性测试 

分 类 号：TN306[电子电信—物理电子学]