太赫兹波的几个基本问题  

Several Key Problems of Terahertz

作　　者：袁明文[1] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家级重点实验室,石家庄050051

出　　处：《微纳电子技术》2009年第5期257-262,共6页Micronanoelectronic Technology

摘　　要：介绍了用于加工太赫兹波元件的微机械加工技术(铣削、放电加工、电铸、湿法腐蚀Si、干法腐蚀Si、厚光刻胶:SU-8和LIGA)及其最新结果。重点描述了应用于太赫兹波的器件和集成电路,如将可用于太赫兹波的各种新颖二极管、半导体纳米器件、新的高电子迁移率晶体管、毫米波集成电路、量子器件、红外器件、量子级联激光器(单极级间跃迁激光器)。基于带间跃迁量子机理的半导体器件(譬如量子级联激光器)的频率极限高于与半导体能带隙相关器件的频率,其大多数体半导体的频率可以达到10THz以上。但是,基于经典的电子扩散传输机理的二极管、三极管的高频极限则受限于渡越时间和寄生参数RC时间常数。The latest results using micromachining techniques （milling, EDM, electro-forming, silicon wet etching, silicon dry etching, SU-8 and LIGA） to fabricate terahertz components are presented. Advanced devices and integrated circuits for terahertz application, such as various novel diodes, semiconductor nano-devices, new HEMTs, millimeter-wave integrated circuits, terahertz and infrared devices quantum cascade lasers （unipolar interband-transition laser）, are emphasized. The frequency limitations of semiconductor devices based on quantum mechanical interband transitions, most of which are up to 10 THz, are higher than those of the devices corresponding to semiconductor energy gap. However, the high frequency limits of diodes and transistors based on the classical diffusive transport of electrons are limited by the transient time and parasitic RC time constant.

关 键 词：太赫兹波 太赫兹波源 高电子迁移率晶体管 量子器件 量子级联激光器 

分 类 号：O471.1[理学—半导体物理]