MOCVD生长的全组分InGaN材料  

Study of InGaN Films Grown by MOCVD

作　　者：徐峰[1] 吴真龙[1] 邵勇[1] 徐洲[1] 刘启佳[1] 刘斌[2] 谢自力[2] 陈鹏[1,2] 

机构地区：[1]南京大学扬州光电研究院,江苏扬州225009 [2]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《微纳电子技术》2009年第5期274-278,300,共6页Micronanoelectronic Technology

基　　金：南京大学扬州光电研究院研发基金(2008003);国家重点基础研究发展规划973(2006CB6049);国家自然科学基金(6039072;60776001;60421003;60676057);高等学校博士学科点专项科研基金(20050284004);江苏省自然科学基金项目(BK2005210)

摘　　要：利用金属有机物化学气相淀积(MOCVD)方法在C面蓝宝石衬底上制备了全组分InGaN薄膜,通过改变生长温度和In/Ga比例成功调控了InGaN合金组分和带隙宽度。利用不同的物理表征手段系统研究了InGaN薄膜的晶体结构和光电学性质,XRD和Hall等测试结果表明:富Ga的InGaN薄膜具有较好的晶体质量,背景电子浓度基本均比富In的InGaN低一个数量级。同时,结合光致发光谱和光学透射谱研究了InGaN合金带隙随In组分的变化关系。InGaN films were fabricated on the （0001） sapphire substrates at different growth parameters by metal organic chemical vapor deposition （MOCVD）. The In-composition and band-gap of InGaN were successfully controlled by changing growth temperature and In/Ga pro- portion. The crystal structure and optoeleetronic properties of InGaN films were researched by different physical characterization methods. The XRD and Hall measurement results show that the qualities of Ga-rich InGaN films are better than that of In-rich films and the background carrier concentration of Ga-rich InGaN films are one order of magnitude lower than that of In-rich films. Combined with photoluminescence and transmission spectra, the In-composition dependences of InGaN alloy band-gap were studied.

关 键 词：INGAN X射线衍射 原子力显微镜 X射线光电子能谱 喇曼散射 

分 类 号：TN304.055[电子电信—物理电子学] TN304.23