Si纳米线及其器件研究进展  

Research Progress of Silicon Nanowires and Devices

作　　者：宋经纬[1,2] 周祥[2] 谌家军[1] 马锡英[2] 

机构地区：[1]西华师范大学物理与电子信息学院,四川南充637002 [2]绍兴文理学院数理信息学院光电材料研究所,浙江绍兴312000

出　　处：《微纳电子技术》2009年第5期285-291,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金项目(60776004);浙江省新苗计划项目(2008R40G2180006)

摘　　要：Si纳米线是一种非常重要的一维半导体纳米材料,在纳米器件方面有很好的应用前景。综述了Si纳米线的一些重要制备方法:激光烧蚀法、模板法、化学气相生长法、热蒸发法,简要介绍了各种制备方法过程并分析各种方法制备纳米线的优缺点。还介绍了Si纳米线所制备纳米器件的电学、电子输运等特性,说明了掺硼、掺磷纳米线分别具有p型、n型半导体特征。最后介绍了Si纳米线在电子器件、纳米线电池、传感器方面的相关应用。Silicon nanowires are an important one-dimensional semiconductor nano-material and have great potential applications in nano-devices. Some important preparation methods of silicon nanowires are summarized, such as the pulsed laser deposition （PLD）, template method, chemical vapor deposition （CVD）, and thermal evaporation deposition （TED）. The different preparation methods are introduced, the advantages and disadvantages of the methods are ana- lyzed. The silicon nanowires in nanoscale devices based on the electron transport properties are introduced. The nanowires doped boron and phosphorus have semiconductor characteristics with p-type and n-type, respectively. Finally, some important applications of silicon nanowire in nanowire electronic devices, nanowire batteries and nanowire sensors are presented.

关 键 词：SI纳米线 纳米线电子器件 纳米线电池 纳米线传感器 电学特性 

分 类 号：TN383[电子电信—物理电子学] TN304.12