自组装方法化学沉积NiMoP镀层研究  

Study on Electroless Deposition NiMoP Layer by SAM

作　　者：刘璐[1] 杨志刚[1] 刘殿龙[1] 张弛[1] 

机构地区：[1]清华大学先进材料教育部重点实验室,北京100084

出　　处：《稀有金属材料与工程》2009年第5期895-900,共6页Rare Metal Materials and Engineering

摘　　要：应用自组装膜吸附钯的活化方法,在SiO2/Si平面基板表面化学沉积NiMoP阻挡层。应用XRF、XRD、SEM以及四探针等方法探讨了镀液中钼酸根浓度、温度及pH值对NiMoP镀层的影响。结果表明,镀层中Mo与P含量互相制约;随钼酸钠浓度上升,化学镀NiMoP的沉积速度逐渐降低,镀层结构由非晶态向晶态转变,镀层电阻率降低;随镀液温度上升,NiMoP镀层的沉积速度逐渐升高;镀液pH值在一定范围内上升可提高NiMoP镀层的沉积速度,镀层的晶粒尺寸与沉积速度有相同的变化趋势。Electroless deposition NiMoP barrier for Cu interconnects was prepared on SiO2/Si substrate by self-assembled monolayer （SAM） activated with PdCl2. The effects of MnO4^2- concentration, temperature and pH value on NiMoP layer were investigated by the methods of X-ray fluorescence （XRF）, X-ray diffraction （XRD）, scan electron microscope （SEM） and four-point probe. The experimental results indicate that Mo and P in the layer are restricted each other; as the content of MnO4^2- increases, the deposition rate increases, the film structure transforms from amorphous to crystal, and the layer resistivity decreases; as the temperature increases, the deposition rate increases; within a certain range of pH value, the deposition rate increases with the increase of pH value. The changes of the layer grain size and the deposition rate have the same trend.

关 键 词：化学沉积 自组装层 NiMoP阻挡层 

分 类 号：TQ153.2[化学工程—电化学工业]