图形反转工艺用于金属层剥离的研究  

Image Reverse Technique for Research of Metal Lift-Off

作　　者：陈德鹅[1] 吴志明[1] 李伟[1] 王军[1] 袁凯[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体技术》2009年第6期535-538,共4页Semiconductor Technology

基　　金：教育部新世纪优秀人才支持计划资助项目(NCET-04-0896)

摘　　要：研究了AZ-5214胶的正、负转型和形成适用于剥离技术的倒台面图形的工艺技术。用扫描电镜和台阶仪测试制作出的光刻胶断面呈倒台面,倾角约为60°,胶厚1.4μm。得到了优化的制作倒台面结构的光刻胶图形的工艺参数:匀胶转速4000r/min,前烘温度100℃,时间60s,曝光时间0.3s,反转烘温度110℃,时间90s,泛曝光时间2s,显影时间50s。用金相显微镜测试了在优化工艺参数条件下制作的光刻胶图形的分辨率,同时对图形反转机理进行了讨论。Transformation of AZ-5214 photoresist from positive to negative patterns and the technology of producing reversed-trapezoid shape were studied, which was suitable for exfoliation corrosion technique in manufacturing microelectronics devices. SEM and step profiler tests show the reversed-trapezoid shape of photoresist patterns is with 60° obliquity and photoresist thickness is 1.4μm. Optimum parameters about preparation of reversed-trapezoid patterns are： coating rotation speed is 4 000 r/min, pre-bake is 100 ℃/60 s, exposure time is 0.3 s, reversal bake is 110℃/90 s, flood exposure time is 2 s, developing time is 50 s. Metalloscope was used to test the resolution of produced photoresist patterns in optimum parameters, also mechanisms of image reverse was discussed.

关 键 词：光刻 AZ-5214 剥离工艺 图形反转 断面模拟 

分 类 号：TN305[电子电信—物理电子学]