新型亚纳秒高功率半导体开关器件  

Novel Subnanosecond High Power Semiconductor Switch Device

作　　者：刘忠山[1] 杨勇[1] 马红梅[1] 刘英坤[1] 崔占东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第6期557-559,共3页Semiconductor Technology

摘　　要：介绍了一种基于半导体内部的等离子体波理论而设计制造的全固态高功率半导体开关器件——快速离化器件(FID),阐述了FID器件的工作机理。采用传统的电力电子器件的制造工艺技术,研制出了新型亚纳秒快速离化器件。FID器件采用无感裸芯片封装技术,寄生参数小。单个FID器件工作电压>2kV,导通时间<1ns,工作电流高达10kA,抖动<20ps,di/dt超过100kA/μs,重复频率400kHz。具有极易串并联、导通触发脉冲可同步产生、工作特性高度稳定、体积小、重量轻等优点,FID可与DSRD组合应用,当采用MARX电路连接时,可以获得几十千伏以上的高压快速脉冲。FID器件脉冲发生器具有广阔的应用前景。A new solid state high power semiconductor switch device fast ionization device （FID） was introduced, which was manufactured successfully based on plasma wave theory in semiconductor, the working principle of FID was described. A new subnanosecond high power semiconductor switch device was manufactured by conventional electric power device technology and non-inductive bare-chip packaging technology with small parasitic parameters. Some characteristics of the single device was obtained, the operating voltage is up to 2 kV, turn-on time is less than 1 ns, operating current reaches up to 10 kA, di/ dt is more than 100 kA/μs, dithering is less than 20 ps, and repeat frequency is 400 kHz. FIDs have some advantages such as high reliability, compactness, easily series-parallel connection, no delay over the triggering pulse. More than several ten kV high voltage fast pulse can be obtained when FID used in MARX circuit. FIDs are very promising in pulse generators applications.

关 键 词：快速离化器件 等离子体波 快速离化 漂移阶跃恢复器 亚纳秒 无感裸芯片封装 

分 类 号：TM56[电气工程—电器]