Al-Cu互连导线侧壁孔洞形成机理及改进方法  

Principle and Solution of Sidewall Attack Defect in Al-Cu Interconnect Process

作　　者：施海铭[1,2] 汪辉[1] 李化阳 林俊毅 

机构地区：[1]上海交通大学微电子学院,上海200240 [2]上海宏力半导体制造有限公司蚀刻工程部,上海201203

出　　处：《半导体技术》2009年第6期569-572,共4页Semiconductor Technology

基　　金：国家自然科学基金(NSFC60606015);上海市浦江人才计划项目(05PJ14068)

摘　　要：侧壁孔洞缺陷是当前Al-Cu金属互连导线工艺中的主要缺陷之一。此种缺陷会导致电迁移,从而降低器件的可靠性。缺陷的产生是由于在干法等离子光刻胶去除工艺过程中,θ相Al2Cu在Al晶界聚集成大颗粒,并且在随后的有机溶液湿法清洗过程中原电池反应导致Al被腐蚀而在互连导线侧壁生成孔洞。通过对光刻胶去除工艺温度以及湿法清洗工艺中有机溶液的水含量控制可以抑制这种缺陷产生,从而减少电迁移,并且提高芯片的可靠性。Sidewall attack is one of the main defects in Al-Cu interconnect process. This defect will cause EM issue, and reduce the reliability of device. During plasma PR striping process θ phase Al2Cu granule form in the metal line surface due to precipitate and rapid diffusion under certain temperature. Then defects come into being because of galvanic effect during the process of post-etch wet clean with solvent. This defect can be eliminated by controlling temperature of PR strip process and water percentage of solvent. Then EM issue can be solved, and reliability of chip is also improved.

关 键 词：Al-Cu互连 侧壁孔洞缺陷 θ相Al2Cu光刻胶清洗 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]