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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2009年第6期602-606,共5页Semiconductor Technology
摘 要:为了更准确地设计功率放大器,放弃了依靠调试的设计方法而采用负载牵引法进行大信号参数提取并以此为基础进行放大的设计。阐述了管芯大信号模型理论,介绍了利用负载牵引技术对管芯进行大信号参数的提取过程,运用ADS软件对功率放大器的微波性能如增益、驻波比和功率附加效率等进行了优化,并在此基础上设计了S波段小型化功率放大器模块。制作的单级功率放大器模块在500MHz带宽内Gp>9dB,VSWR≤1.5∶1,Pout≥34.6dBm。In order to design power amplifier more accurately, the old method that design PA through debugging was thrown away, and an amplifier was designed based on the large signal parameters extracted through load pull. The theory of large signal model and the process of extracting large signal parameter using load pull technique were introduced, the microwave performance of power amplifier, such as gain, standing wave ratio (SWR), power added efficiency (PAE) and so on were optimized using ADS, at last a S-band mini-size power amplifier module was designed, whose bandwidth is 500 MHz. The one-stage power amplifier module achieved can reach over 9 dB in gain, 34.6 dBm in output power and the VSWR is no more than 1.5.
分 类 号:TN722.75[电子电信—电路与系统]
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