2.45GHz电子射频标签模拟前端芯片的研制  

Design and Fabrication of 2.45 GHz RFID Radio/Analog Front-End

作　　者：李远鹏[1] 吴洪江[1] 默立冬[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第6期607-610,614,共5页Semiconductor Technology

摘　　要：分析了RFID系统的组成和基本原理,针对超高频EPC C1G2协议,提出半无源及有源电子标签前端结构及参考电路,包括整流器、偏置单元、上电复位、解调、反向散射调制、振荡器等部分。采用多种方法,极大程度上实现了电路整体的低功耗,并且采取了限幅、ESD电路,保障了电路的稳定性。采用标准CMOS工艺,设计出了低功耗、低电压工作的2.45GHz射频模拟前端芯片电路,芯片在0.8～1.8V电压内均可正常工作。芯片的静态工作电流为2μA,芯片工作时,平均工作电流约为65μA。The structure configuration and basic theory of RFID system were analyzed based on EPC C1G2. The structure of the RFID front-end and the reference circuit of semi-passive and active tag were brought forward, consisting of a rectifier, a bias cell, a power on reset, an AM demodulator and back scatter modulator, a clock oscillator and so on. Some techniques were used to reduce the power consume greatly. Also amplitude-restrict and ESD protect circuit was used for the stability of the circuit. The RFID front-end chip working in 2.45 GHz with low power consume was implemented in standard CMOS process. The chip supply voltage range is 0.8 to 1.8V, the static current of the chip is 2 μA and the average current is 65 μA on working.

关 键 词：射频标签 整流器 稳压源 限幅 ESD电路 静态工作电流 

分 类 号：TN202[电子电信—物理电子学]